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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION *With TO-220 package *Complement to type 2SA1111/1112 *Good linearity of hFE *High VCEO APPLICATIONS *For audio frequency, high power amplifiers application PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER 2SC2591 VCBO Collector-base voltage 2SC2592 2SC2591 VCEO Collector-emitter voltage 2SC2592 VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 180 5 1 1.5 20 150 -55~150 V A A W Open emitter 180 150 V CONDITIONS VALUE 150 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SC2591 IC=0.1mA ,IB=0 2SC2592 IE=10A ,IC=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=120V; IE=0 VEB=4V; IC=0 IC=150mA ; VCE=10V IC=500mA ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCE=10V CONDITIONS SYMBOL 2SC2591 2SC2592 MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 5 0.5 1.0 2.0 2.0 1 1 90 50 20 200 pF MHz 330 V V V A A VEBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency hFE-1 Classifications Q 90-155 R 130-220 S 185-330 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2591 2SC2592 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 4 |
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